Three-dimensional scattering matrix simulation of resonant tunnelling via quasi-bound states in vertical quantum dots

Microelectronics Journal

Volumn 30, Issue 10, 1999, Pages 1007-1017

  Mizuta, H ^a  

^a HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON ENERGY LEVELS; ELECTRON RESONANCE; ELECTRON SCATTERING; ELECTRON TUNNELING; IONIZATION; MATRIX ALGEBRA; NONLINEAR EQUATIONS; SEMICONDUCTOR DIODES;

LATERAL MODE MIXING; THREE DIMENSIONAL TIME-INDEPENDENT SCHRODINGER EQUATION; VERTICAL QUANTUM DOTS; ZERO-DIMENSIONAL RESONANT TUNNELING DIODES (RTD);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032678777     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(99)00063-4     Document Type: Article

References (27)

1. Reed M.A., Randall J.N., Aggarwal R.J., Matyi R.J., Moore T.M., Westel A.E. Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure. Phys. Rev. Lett. 60:(6):1988;535.
2. Reed M.A., Randall J.N., Luscombe J.H. Non-equilibrium quantum dots: transport. Nanotechnology. 1:1990;63.
3. 1-xAs heterojunctions and high-resistance regions induced by focused Ga ion-beam implantation. Phys. Rev. B41:1990;5459.
4. Su B., Goldman V.J., Santos M., Shayegan. Resonant tunneling in submicron double-barrier heterostructures. Appl. Phys. Lett. 58:1991;747.
5. Dellow M.W., Benton P.H., Henini M., Main P.C., Eaves L., Beaumont S.P., Wilkinson C.D.W. Gated resonant tunnelling devices. Electronics Lett. 27:1991;134.
6. Gueret P., Blanc N., German R., Rothuizen H. Confinement and single-electron tunneling in Schottky-gated, laterally squeezed double-barrier quantum-well heterostructure, Phys. Rev. Lett. 68:1992;1896.
7. Tarucha S., Tokura T., Hirayama Y. Resonant tunneling of three-dimensional electrons into degenerate zero-dimensional levels. Phys. Rev. B. B44:1991;13815.
8. Austing D.G., Honda T., Tarucha S. New design for submicron double-barrier resonant tunnelling transistors. Semicond. Sci. Technol. 11:1996;212.
9. Tarucha S., Austing D.G., Honda T., van der Hage R.J., Kouwenhoven L.P. Shell filling and spin effects in a few electron quantum dot. Phys. Rev. Lett. 77:1996;3613.
10. McLennan M.J., Lee Y., Datta S. Voltage drop in mesoscopic systems: a numerical study using a quantum kinetic equation. Phys. Rev. B. 43:1991;13 846. Also see S. Datta: Electronic Transport in Mesoscopic Systems, Cambridge University Press, Cambridge, 1995.
11. Mizuta H., Goodings C.J. Quantum transport simulation based on the statistical density matrix. J. Phys.: Condens. Matter. 3:1991;3739.
12. Buot F.A., Jensen K.L. Lattice Weyl-Wigner formulation of exact many-body quantum-transport theory and applications to novel solid-state quantum-based devices. Phys. Rev. B. 42:1990;9429.
13. Mizuta H., Tomonori T. The Physics and Application of Resonant Tunnelling Diodes. 1995;Cambridge University Press, Cambridge.
14. Mizuta H., Goodings C.J., Wagner M., Ho S. Three-dimensional numerical analysis of multi-mode quantum transport in zero-dimensional resonant tunnelling diodes. J. Phys.: Condens. Matter. 4:1992;8783.
15. Mizuta H. Numerical study of single-electron resonant tunnelling via a few ionised donors in laterally confined resonant tunnelling diodes. Jpn. J. Appl. Phys. 35:1996;2012.
16. Eto M. Numerical studies of transport properties through artificial atoms and molecules. Solid-State Electron. 42:1998;1373.
17. Eto M. Anomalous temperature dependence of Coulomb oscillations at nearly degenerate levels. J. Phys. Soc. Jpn. 66:1997;2244.
18. Goodings C.J., Mizuta H., Cleaver J.R.A., Ahmed H. Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates. Surf. Sci. 305:1994;353.
19. Goodings C.J., Mizuta H., Cleaver J.R.A., Ahmed H. Variable-area resonant tunneling diodes using implanted in-plane gates. J. Appl. Phys. 76:1994;1276.
20. xAs quantum-well structures. Phys. Rev. B. 34:1986;951.
21. Luban M., Luscombe J.H., Reed M.A., Pursey D.L. Anharmonic oscillator model of a quantum dot nanostructure. Appl. Phys. Lett. 54:1989;1997.
22. Tewordt M., Martin-Moreno L., Nicholls J.T., Pepper M., Kelly M.J., Law V.J., Ritchie D.A., Frost J.E.F., Jones G.A.C. Phys. Rev. B. 45:1992;14407.
23. Su B., Goldman V.J., Cunningham J.E. Single-electron tunneling in nanometer-scale double-barrier heterostructure devices. Phys. Rev. B. 46:1992;7644.
24. Mizuta H., Yamaguchi K., Yamane M., Tanoue T., Takahashi S. Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMTs. IEEE Trans. Electron. Device. ED-36:1989;2307.
25. Spicer W.E., Chye P.W., Skeath P.R., Su C.Y., Lindau I. New and unified model for Schottky barrier and III-V insulator interface states formation. J. Vac. Sci. Technol. 16:1979;1422.
26. Fano U. Effects of configuration interaction on intensities and phase shifts. Phys. Rev. 124:1961;1866.
27. Goodings C.J., Mizuta H., Cleaver J.R.A. Electrical studies of charge build-up and phonon-assisted tunneling in double-barrier materials with very thick spacer layers. J. Appl. Phys. 75:1994;2291.