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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 A, 1996, Pages 2012-2019

Numerical study of single-electron resonant tunnelling via a few ionised donors in laterally confined resonant tunnelling diodes

(1) Mizuta, Hiroshi a

a HITACHI LTD (Japan)

Author keywords

Fine structure; Ionised donor; Lateral confinement; Resonant tunnelling; S matrix; Schr dinger equation

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONS; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; PROBABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THREE DIMENSIONAL; TUNNEL DIODES;

ELECTRON PROBABILITY DENSITY; FINE STRUCTURE; IONISED DONOR; LATERAL CONFINEMENT; RESONANT TUNNELLING; SCHRODINGER EQUATION; THREE DIMENSIONAL MULTIMODE SCATTERING MATRIX THEORY;

ELECTRON TUNNELING;

EID: 0030124821 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.2012 Document Type: Article

Times cited : (3)

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