SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 1121-1125

Self-assembled InP quantum dots for red LEDs on Si and injection lasers on GaAs

(7) Zundel, M K a Eberl, K a Jin Phillipp, N Y b Phillipp, F b Riedl, T c Fehrenbacher, E c Hangleiter, A c

a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

c UNIVERSITY OF STUTTGART (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; INJECTION LASERS; LIGHT EMITTING DIODES; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

SELF-ASSEMBLING QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032678560 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)01540-1 Document Type: Article

Times cited : (10)

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