Effects of capping barrier layers on the compositional and structural variations of integrated Pb(Zr, Ti)O3 ferroelectric capacitor having the dimension 3 × 3 μm2

Journal of Materials Research

Volumn 14, Issue 5, 1999, Pages 2053-2060

  Hwang, Cheol Seong ^a   Shin, Ju Cheol ^a   Lee, Jae Bin ^a   Park, Jae Hoo ^a   Cho, Young Jin ^a   Kim, Hyeong Joon ^a   Lee, Sang Yung ^b   Park, Soon Oh ^b  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; DIFFUSION; ENERGY DISPERSIVE SPECTROSCOPY; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; HYSTERESIS; RANDOM ACCESS STORAGE; SEMICONDUCTING ALUMINUM COMPOUNDS; STRUCTURE (COMPOSITION); TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

CAPPING BARRIER LAYERS; COMPOSITIONAL VARIATION; FERROELECTRIC HYSTERESIS; INTERMETAL DIELECTRIC; STRUCTURAL VARIATION;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 0032677244     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0277     Document Type: Article

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