Properties of SrBi2Ta2O9 thin films grown by MOCVD for high density FeRAM applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1998, Pages 56-57

  Hintermaier, F ^a   Hendrix, B ^a   Desrochers, D ^a   Roeder, J ^a   Dehm, C ^a   Fritsch, E ^a   Hoenlein, W ^a   Mazure, C ^a   Nagel, N ^a   Thwaite, P ^a   Wendt, H ^a   Baum, T H ^a   van Buskirk, P ^a   Schumacher, M ^a   Grossmann, M ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FERROELECTRIC DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; POLARIZATION; RANDOM ACCESS STORAGE; SEMICONDUCTOR GROWTH; STRONTIUM COMPOUNDS; THIN FILMS;

FERROELECTRIC RANDOM ACCESS MEMORY (FERAM);

DIELECTRIC FILMS;

EID: 0031634347     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)