Impact ionization coefficient of excitons in n-GaAs

Semiconductor Science and Technology

Volumn 14, Issue 5, 1999, Pages 461-464

  Kundrotas, J ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; IMPACT IONIZATION; PHOTONS; SEMICONDUCTOR DOPING;

BOLTZMANN EQUATION; ELECTRON DISTRIBUTION FUNCTION; TIME-CORRELATED SINGLE-PHOTON COUNTING TECHNIQUE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032677095     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/5/016     Document Type: Article

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