Donor avalanche breakdown field in n-GaAs: Effect of concentration and lattice temperature

Solid-State Electronics

Volumn 41, Issue 8, 1997, Pages 1185-1188

  Dargys, A ^a   Kundrotas, J ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTATIONAL METHODS; CRYSTAL LATTICES; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; IONIZATION; THERMAL EFFECTS;

BOLTZMANN TRANSPORT EQUATIONS; DONOR AVALANCHE BREAKDOWN;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031211325     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)86797-4     Document Type: Article

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