Shallow donor impact ionization in n-InP and n-GaAs: Influence of doping and compensation

Semiconductor Science and Technology

Volumn 11, Issue 5, 1996, Pages 692-696

  Kundrotas, J ^a   Dargys, A ^a   Cesna A ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRONS; IONIZATION; MATHEMATICAL MODELS; PROBLEM SOLVING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

BOLTZMANN TRANSPORT EQUATION; CARRIER DISTRIBUTION FUNCTION; HOT ELECTRON DISTRIBUTION FUNCTION; SHALLOW DONOR IMPACT IONIZATION;

SEMICONDUCTOR MATERIALS;

EID: 0030145925     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/5/007     Document Type: Article

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