New low contact resistance triple capping layer enabling very high Gm InAlAs/InGaAs HEMTs

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 643-647

  Higuchi, K ^a   Mori, M ^a   Kudo, M ^a   Mishima, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

Contact resistance; High electron mobility transistor (HEMT); InP; Nonalloyed electrodes

Indexed keywords

EID: 0344540957     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666517     Document Type: Article

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