Material properties of GaN grown by MOCVD

Surface and Interface Analysis

Volumn 28, Issue 1, 1999, Pages 150-154

  Liu, Wei ^a   Li, Ming Fu ^a   Feng, Zhe Chuan ^b   Chua, Soo Jin ^a,b   Akutsu, Nakao ^c   Matsumoto, Koh ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; FILM GROWTH; LIGHT REFLECTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; THIN FILMS;

SEMICONDUCTING GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032675118     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199908)28:1<150::AID-SIA595>3.0.CO;2-0     Document Type: Article

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