Fabrication and optical properties of one period of a three-dimensional photonic crystal operating in the 5-10 μm wavelength region

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1282-1285

  Yamamoto, Noritsugu ^a   Noda, Susumu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

GaAs; Optical properties; Photonic band; Photonic crystal; Wafer fusion

Indexed keywords

BAND STRUCTURE; CRYSTAL STRUCTURE; LASER BEAM EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE;

LASER BEAM ALIGNMENT TECHNIQUE; PHOTONIC BAND; PHOTONIC CRYSTAL; WAFER FUSION;

CRYSTALS;

EID: 0032674538     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1282     Document Type: Article

References (7)

1. E. Yablonovitch: Phys. Rev. Lett. 58 (1987) 2059.
2. C. C. Cheng and A. Scherer: J. Vac. Sci. Technol. B 13 (1995) 2696.
3. S. Noda, N. Yamamoto and A. Sasaki: Jpn.J.Appl. Phys.35 (1996) L909.
4. E. Yablonovitch, T. J. Gmitter and K. M. Leung: Phys. Rev. Lett. 67 (1991) 2295.
5. N. Yamamoto, S. Noda and A. Sasaki: Jpn.J.Appl. Phys. 36 (1997) 1907.
6. N. Yamamoto and S. Noda: Jpn. J. Appl. Phys. 37 (1998) 3334.
7. J. B. Pendry and A. MacKinnon: Phys. Rev. Lett. 69 (1992) 2772.