An 0.18-μm CMOS for mixed digital and analog applications with zero-Volt-Vth epitaxial-channel MOSFET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1378-1383

  Ohguro, Tatsuya ^a,b   Naruse, Hiroshi ^b   Sugaya, Hiroyuki ^b   Morifuji, Eiji ^a,b   Nakamura, Sinichi ^b   Yoshitomi, Takashi ^a,b   Morimoto, Toyota ^b   Kimijima, Hideki ^b   Momose, Hisayo Sasaki ^a,b   Katsumata, Yasuhiro ^a,b   Iwai, Hiroshi ^a,b  

^a IEEE   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIGITAL INTEGRATED CIRCUITS; EPITAXIAL GROWTH; LINEAR INTEGRATED CIRCUITS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE;

REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION (RPCVD);

CMOS INTEGRATED CIRCUITS;

EID: 0032671606     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772479     Document Type: Article

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