Growth of cubic SiC thin films on silicon from single source precursors by supersonic jet epitaxy

Materials Research Society Symposium - Proceedings

Volumn 441, Issue , 1997, Pages 705-710

  Boo, Jin Hyo ^a   Ustin, Scott A ^a   Ho, Wilson ^a   Maruska, H Paul ^a   Norris, Peter E ^a   Kim, Ig Hyeon ^a   Sung, Changmo ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; SILANES; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

SEPARATION BY IMPLANTED OXYGEN (SIMOX); SUPERSONIC JET EPITAXY;

SEMICONDUCTING FILMS;

EID: 0030687114     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)