Electrical activity of tilt and twist Grain Boundaries in silicon

Solid State Phenomena

Volumn 67, Issue , 1999, Pages 15-20

  Fedotov, A ^a   Mazanik, A ^a   Katz, E ^a   Ilyashuk, Yu ^a   Drozdovski, A ^a   Polyak, L ^a  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALLOGRAPHY; GRAIN BOUNDARIES; SEMICONDUCTOR GROWTH;

EDGE-DEFINED FILM-FED GROWTH; ELECTRICAL ACTIVITY;

SEMICONDUCTING SILICON;

EID: 0032668397     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.67-68.15     Document Type: Article

References (18)

1. th IEEE Photovoltaics Specialists Conf., Edited by C.J. Bishop (IEEE, New York, 1981), p. 1251.
2. K.S. Saraswat, Mater. Res. Soc. Vol. 5, 261 (1982).
3. V.S. Edelman, L.K. Fionova and L.E. Polyak, Phys. Stat. Solidi Vol. A123, 193 (1991).
4. N.N. Tkachenko, N.I. Stroiteleva, G.P. Kolomoetz, L.E. Polyak, M.S. Kishneva and C.A. Stepantzov, Ukrainski Fizichny Zhurnal (Ukraine) Vol. 39, 344 (1994).
5. A. Fedotov, B. Evtody, L. Fionova and E. Katz, Phys. Stat. Solidi Vol. A119, 523 (1990).
6. A. Fedotov, B. Evtody, L. Fionova and E. Katz, J. Cryst. Growth Vol. 104, 186 (1990).
7. N.N. Tkachenko, G.P. Kolomoetz, A.K. Fedotov and Yu.M. Ilyashuk, Fizika Tverdogo Tela (Soviet Physics - Solid State) Vol. 33, 1593 (1991).
8. A. Fedotov, Y. Ilyashuk and S. Shumski, in Polycrystalline Semiconductors IV: Physics, Chemistry and Technology (Springer Ser. Solid State Phenomena, Vols. 51-52, Edited by S. Pizzini, H.P. Strunk and J.H. Werner, Scitec Publications, 1996), p. 385.
9. A. Fedotov, A. Drozdovski and S. Shumski, in Polycrystalline Semiconductors IV: Physics, Chemistry and Technology (Springer Ser. Solid State Phenomena, Vols. 51-52, Edited by S. Pizzini, H.P. Strunk and J.H. Werner, Scitec Publications, 1996), p. 33.
10. W.E. Taylor and N.H. Odell, Phys. Review Vol. 88, 867 (1952).
11. G. Blatter and F. Greuter in Polycrystalline Semiconductors (Springer Ser. Solid State Phenomena, Vol. 57, Edited by G. Harbeke, Springer, Berlin, 1985), p. 118.
12. G.E. Pike, P.L. Gourley and S.R. Kurtz, Appl. Phys. Lett. Vol. 43, 939 (1983).
13. G.E. Pike and C.H. Seager, J. Appl. Physics Vol. 50, 3414 (1979).
14. G. Blatter and F. Greuter, Phys. Review Vol. B34, 8555 (1986).
15. A. Mazanik and A. Fedotov, in Polycrystalline Semiconductors V: Bulk Materials, Thin Films and Devices (Springer Ser. Solid State Phenomena, Edited by J.H. Werner, H.P. Strunk and H.W. Schok, Scitec Publications, 1999), to be published.
16. A. Fedotov, M. Chuiko, A. Rabyshko and S. Shumski, in Gettering and Defect Engineering in Semiconductor Technology (Springer Ser. Solid State Phenomena, Vols. 57-58, Edited by C. Claeys and J. Vanhellemont, H. Richter and M. Kittler, Scitec Publications, 1997), p. 471.
17. S. Amelincks and W. Dekeyser. In Solid State Physics (Edited by F. Seitz and D. Turnball, Academic Press, New York, 1959), p. 362.
18. H.F. Matare, J. Appl. Physics Vol. 56, 2605 (1984).