The switching effects at grain boundaries spontaneously nucleating at the crystallization front of shaped silicon

Solid State Phenomena

Volumn 51-52, Issue , 1996, Pages 33-38

  Fedotov, A ^a   Drozdovski, A ^a   Shumski, S ^a  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

Carrier Transport; Grain Boundaries; Polycrystal; Switch Effects

Indexed keywords

EID: 4243239146     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.51-52.33     Document Type: Article

References (8)

1. A. Artem'ev, S.Gorelik, A.Fedotov, L.Fionova, B.Evtody, Yu.Ilyashuk and E.Katz, Proc. of Academy of Science (USSR), Physical Ser 52, 1951 (1988).
2. A.Fedotov, B.Evtody, L.Fionova, Yu.Ilymshuk and E.Katz, Phys. Stat Solidi 119A, 523 (1990).
3. A.Fedotov, B.Evtody, L.Fionova, Yu.Ilyashuk and E.Katz, J. Cryst. Growth 104, 186 (1990)
4. A.Fedotov, Yu.Iljashuk, B.Evtody and E.Katz, Eletronika (USSR), Material series N7, 12 (1991).
5. G.C.McGonigal, D.J. Thompson and J.G. Shaw, Phys Rev. 28B, 5908 (1983).
6. A.Broniatowski, Phys. Rev 36B, 5808 (1987)
7. A.Drozdovsky, I. Tralle and A.Fedotov Proc. of Byelorussian University Ser. pays., mechan., mathemat (Belarus) N1, 40 (1993)
8. G.Blatter and D.Bacriswyl, Phys. Rev. B36, 6446 (1987)