Hydrogen removal by annealing from C-doped InGaAs grown on InP by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 200, Issue 3, 1999, Pages 599-602

  Watanabe, Noriyuki ^a   Yamahata, Shoji ^a   Kobayashi, Takashi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CARBON; DIFFUSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REMOVAL; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE;

CARBON DOPING; HOLE CONCENTRATION; HYDROGEN DIFFUSION; HYDROGEN REMOVAL;

HYDROGEN;

EID: 0032666776     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01435-3     Document Type: Article

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