Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy

Electronics Letters

Volumn 32, Issue 9, 1996, Pages 850-851

  Gregory, H J ^a   Bonar, J M ^a   Ashburn, P ^a   Parker, G J ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILANES;

FULLY SELF ALIGNED SILICON BIPOLAR TRANSISTORS; SILANE ONLY SELECTIVE EPITAXY;

BIPOLAR TRANSISTORS;

EID: 0030122442     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960570     Document Type: Article

References (8)