Dynamic stressing of thin tunnel oxides: A way to emulate a single EEPROM cell programming function

Journal of Non-Crystalline Solids

Volumn 245, Issue 1-3, 1999, Pages 85-91

  Plossu, C ^a   Voisin, J M ^a   Bos, B ^a   Raynaud, C ^a   Bouchakour, R ^b   Boivin, P ^c   Balland, B ^a  

^a UNIVERSITÉ DE LYON   (France)

^b TELECOM PARISTECH   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; ELECTRON TUNNELING; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); PROM; SEMICONDUCTING SILICON COMPOUNDS; SILICA; STRESSES;

DYNAMIC STRESSING; FOWLER-NORDHEIM TUNNELING INJECTION MECHANISMS;

MOS CAPACITORS;

EID: 0032664872     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00875-8     Document Type: Article

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