Transient stressing and characterization of thin tunnel oxides

Microelectronics Reliability

Volumn 37, Issue 10-11, 1997, Pages 1525-1528

  Ciappa, M ^a   Naitana, A ^b   Vanzi, M ^b  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC CURRENTS; ELECTRIC FIELDS; MATHEMATICAL MODELS; MOS DEVICES;

CURRENT VOLTAGE MEASUREMENTS; FOWLER-NORDHEIM TRANSIENT INJECTION LEVELS; THIN TUNNEL OXIDES; TRANSIENT STRESSING;

OXIDES;

EID: 0031250791     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00100-5     Document Type: Article

References (5)

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2. J.S. Witters, G. Groeseneken, Degradation of Tunnel-Oxide Floating-Gate EEPROM Devices and the Correlation with High Field-Current-Induced Degradation of Thin Gate Oxides, IEEE Trans Electron Dev ED-36(1989)1663
3. D.J. DiMaria, Determination of Insulator Bulk Trapped Charge Densities and Centroids from Photocurrent-Voltage Characteristics of MOS Structures, J Appl Phys 47(1976)4073
4. C. Papadas, G. Ghibaudo, G. Pananakakis, C. Riva, P. Ghezzi, Model for Programming Window Degradation in FLOTOX EEPROM Cells, IEEE Electron Dev Letters EDL-43(1993)89
5. C. Papadas, G. Ghibaudo, F. Pio, G. Pananakakis, P. Mortini, C. Riva, On the Charge Build-up Mechanism in Gate Dielectrics, Solid State Electronics 37(1994)495