Properties of tantalum pentoxide (Ta2O5) obtained by plasma assisted deposition using a TaF5 source

Journal of Non-Crystalline Solids

Volumn 254, Issue 1-3, 1999, Pages 139-145

  Four, S ^a,b   Devine, R A B ^a   Luo, E Z ^c   Wilson, I H ^c   Cheng, H S ^d  

^a ORANGE LABS   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^d FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; FLUORINE; HYDROGEN; MICROWAVES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POINT DEFECTS; POLARIZATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TANTALUM COMPOUNDS; THIN FILMS;

TANTALUM FLUORIDE; TANTALUM PENTOXIDE;

DIELECTRIC FILMS;

EID: 0032664662     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(99)00439-1     Document Type: Article

References (4)

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2. J.H. Yun, S.W. Rhee, Thin Solid Film 292 (1997) 324.
3. T. Aoyama, S. Saida, Y. Okayama, M. Fujisaki, K. Imai, T. Arikado, J. Electrochem. Soc. 143 (1996) 977.
4. S. Kamiyama, P.Y. Lesaicherre, H. Suzuki, A. Sakai, I. Nshiyama, A. Ishitani, J. Electrochem. Soc. 140 (1993) 1617.