Plasma immersion ion implantation for electronic materials

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1027-1036

  Jones, Erin C ^a   Linder, Barry P ^a   Cheung, Nathan W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Dosimetry; Etching; Implantation; Plasma doping; Plasma immersion ion implantation; Pn junction; Polysilicon; Shallow junction; SIMOX; TFT; Trench

Indexed keywords

DEPOSITION; DOSIMETRY; DYNAMICS; ETCHING; MATHEMATICAL MODELS; PERMITTIVITY; PLASMA APPLICATIONS; PLASMA COLLISION PROCESSES; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SYNTHESIS (CHEMICAL); TECHNOLOGY;

DOSE RATE IMPLANTATION; ELECTRONIC MATERIALS; PLASMA DOPING; PLASMA IMMERSION ION IMPLANTATION; ULTRA SHALLOW JUNCTION;

ION IMPLANTATION;

EID: 0030079775     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1027     Document Type: Article

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