Analytical Models for Transient Diffusion and Activation of Ion-Implanted Boron During Rapid Thermal Annealing Considering Ramp-Up Period

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 799-802

  Suzuki, Kunihiro ^a   Aoki, Masaki ^a   Kataoka, Yuji ^a   Sasaki, Nobuo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ION IMPLANTATION; RAPID THERMAL ANNEALING; TRANSIENT ANALYSIS; ANNEALING; BORON; CARRIER CONCENTRATION; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; SECONDARY ION MASS SPECTROMETRY;

DIFFUSION PROFILES; DIFFUSION TIME; ION IMPLANTED; PROCESS SIMULATORS; RAMP UP; TRANSIENT DIFFUSION; UP PERIOD; WIDE TEMPERATURE RANGES; DIFFUSIVITY; RAMP UP PERIOD; RAPID THERMAL ANNEALING; SPREADING RESISTANCE; TRANSIENT DIFFUSION TIME;

BORON; DIFFUSION;

EID: 0030410540     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554100     Document Type: Conference Paper

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