Fabrication of undoped semi-insulating InP by multiple-step wafer annealing

Journal of Electronic Materials

Volumn 27, Issue 1, 1998, Pages 8-11

  Uchida, M ^a   Kainosho, K ^a   Ohta, M ^a   Oda, O ^a  

^a JAPAN ENERGY CORPORATION   (Japan)

Author keywords

InP; Semi insulating; Wafer annealing

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; IRON; PHOSPHORUS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; VAPOR PRESSURE;

MULTIPLE STEP WAFER ANNEALING; SEMI INSULATING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031702517     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0329-3     Document Type: Article

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