Electro-thermal simulation and experimental detection of the hot spot onset in power bipolar transistors

Microelectronics Journal

Volumn 28, Issue 3, 1997, Pages 263-275

  Pica, S ^a   Scarpetta, G ^a   Spirito, P ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009973406     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(96)00030-4     Document Type: Article

References (5)

1. P.L. Hower, D.L. Blackburn, F.F. Oettinger and S. Rubin, Stable hot spots and second breakdown in power transistors, PESC '76 Proceedings, 1976, pp. 234-246.
2. G.V. Persiano, A.G.M. Strollo, P. Spirito, A. Patti and S. Sapienza, Small-geometry power BJT: numerical analysis and experimental results, EPE '95 Proceedings, Volume 1, The European Power Electronics Association, 1995, pp. 1189-1194.
3. S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer-Verlag, New York, USA, 1984, p. 119.
4. P. Tounsi, J.M. Dorkel and Ph. Leturq, Thermal modelling for electrothermal simulation of power devices and circuits, EPE '93 Proceedings, The European Power Electronics Association, 1993, pp. 155-160.
5. S. Pica and G. Scarpetta, Thermal instability observation in power transistors by radiometric detection of temperature maps, SPIE Thermosense XVII Conference Proceedings, 1995, pp. 91-98.