Formation and optical properties of nanometer-sized amorphous arsenic clusters embedded in amorphous SiO2 by ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 116, Issue 1-4, 1996, Pages 178-182

  Hosono, H ^a   Tanoue, H ^b   Hishita, S ^c   Nakamura, A ^d  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ARSENIC; COLLOIDS; ENERGY GAP; FOUR WAVE MIXING; FUSED SILICA; IONS; OPTICAL PROPERTIES; POLYMERIZATION; RAMAN SCATTERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

NONLINEAR OPTICAL SUSCEPTIBILITY; OPTICAL BAND GAP; PHOTOINDUCED POLYMERIZATION; STRUCTURAL PROPERTIES;

ION IMPLANTATION;

EID: 0030217315     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(96)00030-4     Document Type: Article

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