Morphological properties of porous-Si layers for n+-emitter applications

Applied Surface Science

Volumn 147, Issue 1, 1999, Pages 187-200

  Bender, H ^a   Jin, S ^a   Poortmans, J ^a   Stalmans, L ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELLIPSOMETRY; MORPHOLOGY; POROSITY; TRANSMISSION ELECTRON MICROSCOPY;

EMITTER; SPECTROSCOPIC ELLIPSOMETRY;

POROUS SILICON;

EID: 0032661502     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00112-9     Document Type: Article

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