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Volumn 35, Issue 19, 1999, Pages 1641-1643
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High-power and high temperature long-term stability of Al-free 950nm laser structures on GaAs
a a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
AGING OF MATERIALS;
LIGHT EMISSION;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
AGING TESTS;
SEMICONDUCTOR LASERS;
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EID: 0032655627
PISSN: 00135194
EISSN: None
Source Type: Journal
DOI: 10.1049/el:19991152 Document Type: Article |
Times cited : (6)
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References (3)
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