Control of the properties of wide bandgap a-SiC : H films prepared by RF PECVD method by varying methane flow rate

Solar Energy Materials and Solar Cells

Volumn 56, Issue 2, 1999, Pages 117-123

  Iftiquar, S M ^a   Barua, A K ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

a SiC : H films; Photoconductivity; RF PECVD

Indexed keywords

BAND STRUCTURE; METHANE; OPTOELECTRONIC DEVICES; PHOTOCONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

SIC(H) FILM PREPARATION;

SEMICONDUCTING FILMS;

EID: 0032653361     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0927-0248(98)00148-2     Document Type: Article

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