Structure analysis of A-Si1-xCx:H with dominant tetrahedral Si-C bonds deposited by hybrid-plasma chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 1 A, 1997, Pages 289-293

  Fujii, Tadashi ^a   Yoshimoto, Masahiro ^a   Fuyuki, Takashi ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

a SiC:H; Hybrid plasma chemical vapor deposition; Infrared absorption; Photoconductivity; Threshold ionization technique; X ray photoelectron spectroscopy

Indexed keywords

HYBRID PLASMA CHEMICAL VAPOR DEPOSITION; QUADRUPOLE MASS ANALYSIS (QMA);

AMORPHOUS FILMS; CARBON; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROWAVES; PHOTOCONDUCTIVITY; PLASMA APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 0030679198     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.36.289     Document Type: Article

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