Analysis of temperature sensitivity in semiconductor lasers using gain and spontaneous emission measurements

Applied Physics Letters

Volumn 70, Issue 7, 1997, Pages 796-798

  Fang, W ^a   Hattendorf, M ^a   Chuang, S L ^a   Minch, J ^a   Chang, C S ^a   Bethea, C G ^b   Chen, Y K ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; EMISSION SPECTROSCOPY; FERMI LEVEL; GAIN MEASUREMENT; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

HAKKI-PAOLI METHOD; INDIUM GALLIUM ARSENIC PHOSPHIDE; RADIATIVE RECOMBINATION; SPONTANEOUS EMISSION;

SEMICONDUCTOR LASERS;

EID: 0031076432     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118225     Document Type: Article

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