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Volumn 22, Issue 6, 1999, Pages 396-398

Fabrication of high-aspect-ratio submicron-to-nanometer range microstructures in LiNbO3 for the next generation of integrated optoelectronic devices by focused ion beams (FIB)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROOPTICAL DEVICES; ETCHING; INTEGRATED OPTICS; ION BEAMS; LIGHT MODULATORS; LITHIUM NIOBATE; MICROSENSORS; MICROSTRUCTURE; NANOTECHNOLOGY; OPTICAL SENSORS;

EID: 0032652610     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1098-2760(19990920)22:6<396::AID-MOP9>3.0.CO;2-K     Document Type: Article
Times cited : (22)

References (8)
  • 4
    • 0032069443 scopus 로고    scopus 로고
    • Potential for size reduction of AlGaAs optical channel waveguide structures fabricated by focused ion beam implantation and oxidation
    • D. Naghski, J. Boyd, H. Jackson, and A. Steckl, Potential for size reduction of AlGaAs optical channel waveguide structures fabricated by focused ion beam implantation and oxidation. Opt Commun 150 (1998), 97-100.
    • (1998) Opt Commun , vol.150 , pp. 97-100
    • Naghski, D.1    Boyd, J.2    Jackson, H.3    Steckl, A.4
  • 7
    • 0000882045 scopus 로고
    • Focused ion beam technology and applications
    • J. Melngailis, Focused ion beam technology and applications, J Vac Sci Technol B5 (1987), 469-495.
    • (1987) J Vac Sci Technol , vol.B5 , pp. 469-495
    • Melngailis, J.1
  • 8
    • 0000035099 scopus 로고
    • Characteristics of gas-assisted focused ion beam etching
    • R. Young, J. Cleaver, and H. Ahmed, Characteristics of gas-assisted focused ion beam etching, J Vac Sci Technol B11 (1993), 234-241.
    • (1993) J Vac Sci Technol , vol.B11 , pp. 234-241
    • Young, R.1    Cleaver, J.2    Ahmed, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.