Electrical and thermoelectrical properties of Sb2Te3 prepared by the metal-organic chemical vapor deposition technique

Journal of Materials Science Letters

Volumn 18, Issue 7, 1999, Pages 541-543

  Giani, A ^a   Boulouz, A ^a   Pascal Delannoy, F ^a   Foucaran, A ^a   Boyer, A ^a   Aboulfarah, B ^b   Mzerd, A ^b  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b FACULTÉ DES SCIENCES   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL ORIENTATION; CURRENT DENSITY; FILM GROWTH; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARTIAL PRESSURE; POLYCRYSTALS; PRESSURE EFFECTS; SEEBECK EFFECT; SEMICONDUCTING ANTIMONY COMPOUNDS; STOICHIOMETRY;

SEEBECK COEFFICIENT;

SEMICONDUCTING FILMS;

EID: 0032650311     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1006670327086     Document Type: Article

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