Recent understandings of elementary growth processes in MBE of GaAs

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 495-499

  Nishinaga, T ^a   Yamashiki, A ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

GaAs; Incorporation diffusion length; Intersurface diffusion; Molecular beam Epitaxy; Surface diffusion

Indexed keywords

ARSENIC; FILM GROWTH; INTERDIFFUSION (SOLIDS); MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE;

INCORPORATION DIFFUSION LENGTH;

THIN FILMS;

EID: 0032649960     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01720-9     Document Type: Article

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