Arsenic pressure dependence of inter-surface diffusion in MBE of GaAs studied by the microprobe-RHEED/SEM MBE system

Thin Solid Films

Volumn 306, Issue 2, 1997, Pages 187-191

  Nishinaga, T ^a   Yamashiki, A ^a   Shen, X Q ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Micro RHEED SEM MBE; Molecular beam epitaxy; Patterned surfaces; Surface diffusion

Indexed keywords

INTERDIFFUSION (SOLIDS); PRESSURE EFFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

INTERSURFACE DIFFUSION;

MOLECULAR BEAM EPITAXY;

EID: 0031224671     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00099-0     Document Type: Article

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