Electrical characterisation of RF sputtered tantalum oxide films rapid thermal annealed with Ar, N2, O2 and N2O

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 105-107

  Choi, W K ^a   Tan, L S ^a   Lim, J Y ^a   Pek, S G ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Rapid thermal annealing; Sputtering; Tantalum pentoxide

Indexed keywords

ARGON; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC INSULATING MATERIALS; INTERFACES (MATERIALS); NITROGEN; NITROGEN OXIDES; OXIDES; OXYGEN; RAPID THERMAL ANNEALING; SILICA; SPUTTER DEPOSITION; TANTALUM COMPOUNDS;

TANTALUM PENTOXIDE;

DIELECTRIC FILMS;

EID: 0032649948     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01622-8     Document Type: Article

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