Data retention time-to-failure of non volatile memories

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 228-231

  De Salvo, B ^a   Ghibaudo, G ^a   Pananakakis, G ^a   Guillaumot, B ^a,b   Candelier, P ^b  

^a LPCSIENSERG ^*  (France)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

THERMAL LOGGING;

CHARGE RETENTION; CURRENT DEPENDENCE; DATA RETENTION TIME; FLOATING GATE MEMORY; FOWLER-NORDHEIM; INTERNAL DIMENSIONS; NON-VOLATILE MEMORY; TIME TO FAILURE;

DATA STORAGE EQUIPMENT;

EID: 0345454572     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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3. B. Fishbein el al., IEEE EL Dev. Letters, 12, 12, 1991.
4. H. Nozawa el al., Jap. J. Appl. Phys., 21, LlII, 1982.
5. G. Pananakakiset al., J. Appl. Phys., 78, 4, 1995.
6. C. Papadas el al., IEEE Trans. Electr. Dev., 42, 678,1995.