Electrochemical metal deposition on atomically nearly-flat silicon surfaces accompanied by nano-hole formation

Electrochimica Acta

Volumn 44, Issue 21, 1999, Pages 3725-3729

  Morisawa, Kazuhiko ^a   Ishida, Masaki ^a   Yae, Shinji ^a   Nakato, Yoshihiro ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CATALYSTS; DISSOLUTION; ELECTRODEPOSITION; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; ETCHING; PLATINUM; SEMICONDUCTING SILICON; SURFACES;

ATOMICALLY NEARLY FLAT SILICON SURFACES; ELECTROCHEMICAL METAL DEPOSITION; ELECTROCHEMICAL REDUCTIVE DISSOLUTION; NANOHOLE FORMATION;

NANOSTRUCTURED MATERIALS;

EID: 0032644775     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0013-4686(99)00077-8     Document Type: Article

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