Structural and electrical quality of silicon bicrystals fabricated by a modified direct bonding technique

Solid State Phenomena

Volumn 69, Issue , 1999, Pages 491-496

  Argunova, T S ^a   Gutkin, M Yu ^b   Kostina, L S ^a   Kudriavtseva, T V ^a   Kim, E D ^c   Kim, S C ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF PROBLEMS OF MECHANICAL ENGINEERING   (Russian Federation)

^c Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; INTERFACES (MATERIALS); VACUUM APPLICATIONS;

MODIFIED DIRECT BONDING TECHNIQUES;

SEMICONDUCTING SILICON;

EID: 0032644533     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.69-70.491     Document Type: Article

References (12)

1. J.B. Lasky, Appl. Phys. Lett., 48 (1986), p. 78.
2. M. Shimbo et al, J. Appl. Phys. 60 (1986), p. 2987.
3. W.P. Maszara et al, J. Appl. Phys. 64 (1988), p. 4943.
4. A. Yamada et al, J. Electrochem. Soc. 138 (1991), p. 2468.
5. W.P. Maszara et al, J. Appl. Phys. 69 (1991), p. 257
6. S. Bengtsson, J. Electronic Materials 21 (1992), p. 841
7. I.V. Grekhov, T.S. Argunova, L.S. Kostina et al, Electronics Letters 31 (1995), p. 20.
8. E.D. Kim, S.C. Kim, J.M. Park, I.V. Grekhov et al, J.Electrochem.Soc. 144 (1997), p. 622.
9. T.S. Argunova, I.V. Grekhov, L.S. Kostina et al. Jap. J. Appl. Phys. 37 (1998) p. 6287.
10. T.S. Argunova, R.T. Vitman, I.V. Grekhov, et al, Phys. Solid State (Russian) at press
11. J. Hirt and J. Lothe: Theory of Dislocations, (John Welley, New York, 1982).
12. S.P. Nikanorov and B.K. Kardashev: "Elasticity and Dislocation Plastticity in Crystals", Moscow, Nauka (1985), 254 p. in Russian