Interfacial properties of silicon structures fabricated by vacuum grooved surface bonding technology

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12, 1998, Pages 6287-6289

  Argunova, Tatyana S ^a   Grekhov, Igor V ^a   Kostina, Lyudmila S ^a   Kudryavtzeva, Tina V ^a   Gutkin, Mikhail Yu ^b   Härtwig, Jürgen ^c   Kim, Eun Dong ^d   Kim, Sang Cheol ^d   Kim, Nam Kyun ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF PROBLEMS OF MECHANICAL ENGINEERING   (Russian Federation)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^d Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

Grooved interfaces; Silicon direct bonding; Structural defects; Vacuum; X ray techniques

Indexed keywords

ANNEALING; BONDING; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; ELECTRON DIFFRACTION; INTERFACES (MATERIALS); VACUUM TECHNOLOGY; X RAY DIFFRACTION ANALYSIS;

VACUUM GROOVED SURFACE BONDING;

SILICON WAFERS;

EID: 0032301575     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6287     Document Type: Article

References (6)

1. I. V. Grekhov, T. S. Argunova, L. S. Kostina, T. V. Kudryavtzeva, E. D. Kim and S.C. Kim: Electron. Lett. 31 (1995) 20.
2. T. S. Argunova, I. V. Grekhov, M. Yu. Gutkin, L. S. Kostina, E. N. Belyakova, T. V. Kudryavtzeva, E. D. Kim and D. M. Park: Phys. Solid State 38 (1996) 1832.
3. I. V. Grekhov, L. S. Berman, T. S. Argunova, L. S. Kostina, E. N. Belyakova, T. V. Kudryavtzeva, E. D. Kim, S. C. Kim and D. M. Park: Tech. Phys. Lett. 22 (1996) 956.
4. B. Lasky: Appl. Phys. Lett. 48 (1986) 78.
5. R. D. Black, S. D. Arthur, R. S. Gilmore, N. Lewis, E. L. Hall and R. D. Lillquist: J. Appl. Phys. 63 (1988) 2773.
6. J. Hirt and J. Lothe: Theory of Dislocations (John Welley, New York, 1982).