Domain misorientation in sublimation grown 4H SiC epitaxial layers

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 168-171

  Tuominen, M ^a,b   Yakimova, R ^a,b   Syvajarvi M ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Okmetic AB   (Sweden)

Author keywords

4H SiC; Domain structure; Sublimation epitaxy; X ray diffraction

Indexed keywords

SUBLIMATION EPITAXIAL METHOD;

CRYSTAL LATTICES; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBLIMATION; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

SILICON CARBIDE;

EID: 0032643815     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00495-4     Document Type: Article

References (4)

1. Syväjärvi M., Yakimova R., MacMillan M.F., Tuominen M., Kakanakova-Georgieva A., Hemmingsson C., Ivanov I.G., Janzén E. Proc. ICSCIII-N'97. Mater. Sci. Forum. 264-268:1998;143-147.
2. Tuominen M., Yakimova R., Kakanakova-Georgieva A., MacMillan M.F., Syväjärvi M., Janzén E. J. Cryst. Growth. 193:1998;101-1081.
3. Tuominen M., Yakimova R., Glass R.C., Tuomi T., Janzén E. J. Cryst. Growth. 144:1994;267-276.
4. Tuominen M., Yakimova R., Prieur E., Ellison A., Tuomi T., Vehanen A., Janzén E. Diamond Related Mater. 6:1997;1272-1275.