Development of dry processing techniques for CdZnTe surface passivation

Journal of Electronic Materials

Volumn 28, Issue 6, 1999, Pages 700-704

  Mescher, M J ^a   Schlesinger, T E ^a   Toney, J E ^b   Brunett, B A ^c   James, R B ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b SPIRE CORPORATION   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRYING; GAMMA RAYS; LEAKAGE CURRENTS; OXYGEN; PASSIVATION; PLASMAS; RADIATION DETECTORS; SILICON NITRIDE; SPUTTER DEPOSITION; X RAYS;

CADMIUM ZINC TELLURIDE; REACTIVE SPUTTERING; X RAY/GAMMA RAY DETECTORS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0032642930     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0057-3     Document Type: Article

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