Magnetoresistance effect of InAs deep quantum well structures grown on GaAs substrates by molecular beam epitaxy

International Conference on Solid-State Sensors and Actuators, Proceedings

Volumn 1, Issue , 1997, Pages 417-418

  Yoshida, T ^a   Okamoto, A ^a   Muramatsu, S ^a   Kuze, N ^a   Shibasaki, I ^a  

^a Asahikasei Electronics Co   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SENSORS; SUBSTRATES;

MAGNETORESISTANCE SENSORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030718292     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)