Asymmetric double barrier resonant tunnelling structures with improved characteristics

Solid State Communications

Volumn 110, Issue 7, 1999, Pages 393-396

  Shi, J J ^a,c   Sanders, B C ^a   Pan, S H ^a,b,c  

^a MACQUARIE UNIVERSITY   (Australia)

^b INSTITUTE OF PHYSICS   (China)

^c CCAST WORLD LABORATORY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENTS; ELECTRON TUNNELING; ELECTRONIC STRUCTURE; MATHEMATICAL MODELS;

DOUBLE BARRIER RESONANT TUNNELING STRUCTURES (DBRTS); GLOBAL COHERENT TUNNELLING MODEL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032641051     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00072-1     Document Type: Article

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