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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 7 A, 1997, Pages 4283-4288

A novel bistable double-barrier resonant tunnel diode by charging effect of InAs dots

(3) Nakano, Takaya a Nakagawa, Takayuki a Yoh, Kanji a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

Charging; GaAs; Hysteresis; InAs; Memory; Quantum dot; RTD

Indexed keywords

CHARGING EFFECT; DOUBLE BARRIER RESONANT TUNNEL DIODES; INDIUM ARSENIDE; RESONANCE STATES;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRON TUNNELING; HIGH TEMPERATURE EFFECTS; HYSTERESIS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS; SHAPE MEMORY EFFECT;

TUNNEL DIODES;

EID: 0031192896 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.4283 Document Type: Article

Times cited : (13)

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