REACTIVE ION ETCHING OF SiC THIN FILMS USING FLUORINATED GASES.

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 4, Issue 1, 1986, Pages 349-354

  Sugiura, J ^a   Lu, W J ^a   Cadien, K C ^a   Steckl, A J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IONS - APPLICATIONS; SEMICONDUCTING FILMS - ETCHING; SEMICONDUCTING SILICON - ETCHING; SILICA - ETCHING; SPECTROSCOPY, AUGER ELECTRON;

ETCH RATE; ETCHING INHIBITOR LAYER; PHOTORESISTS; REACTIVE ION ETCHING;

SILICON CARBIDE;

EID: 0022598669     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.583329     Document Type: Article

References (11)