On the use of the photoacoustic technique for monitoring the surface recombination velocity at SiN:H/Si interfaces

Semiconductor Science and Technology

Volumn 14, Issue 6, 1999, Pages 543-548

  Riech, I ^a   Santana, G ^a   Diaz P ^a   Morales Acevedo, A ^b   Marin E ^a,c   Vargas, H ^c  

^a UNIVERSITY OF HAVANA   (Cuba)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

^c UNIVERSIDADE ESTADUAL DO NORTE FLUMINENSE DARCY RIBEIRO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; INTERFACES (MATERIALS); PASSIVATION; PHOTOACOUSTIC EFFECT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON NITRIDE; SURFACE PROPERTIES; VELOCITY MEASUREMENT;

SURFACE RECOMBINATION VELOCITY;

SEMICONDUCTING FILMS;

EID: 0032637095     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/6/309     Document Type: Article

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