High energy heavy ion irradiation in semiconductors

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 156, Issue 1, 1999, Pages 105-109

  Srivastava, P C ^a   Pandey, S P ^a   Sinha, O P ^a   Avasthi, D K ^b   Asokan, K ^b  

^a BANARAS HINDU UNIVERSITY   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; GOLD; ION BOMBARDMENT; PALLADIUM; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR METAL BOUNDARIES;

CAPACITANCE VOLTAGE CHARACTERISTICS; ELECTRON FLOW ANALYSIS;

SEMICONDUCTOR JUNCTIONS;

EID: 0032635152     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00257-8     Document Type: Article

References (10)

1. Taylor S.J., Yamaguchi M., Matsuda S., Hisamatsu T., Kawasaki O. J. Appl. Phys. 82(7):1997;3239.
2. Taylor S.J., Yamaguchi M., Yamaguchi T., Watanabe S., Ando K., Matsuda S., Hisamatsu T., Kim S.I. J. Appl. Phys. 83(9):1998;4620.
3. Srivastava P.C., Pandey S.P., Avasthi D.K., Asokan K. Vacuum. 48(12):1997;965.
4. Biggeri U., Borchi E., Bruzzi M., Lazanu S., Li Z. IEEE. Trans. on Nucl. Sci. 43(3):1996;1599.
5. Marie P., Levalois M., Girard J.P., Allais G., Julienne D., Paumier E. Radiat. Eff. and Def. In Solids. 126:1993;271.
6. Marie P., Levalois M., Bogdanski P. J. Appl. Phys. 74(2):1993;868.
7. Marie P., Levalois M. J. Appl. Phys. 75(3):1994;1852.
8. Pons D., Bourgoin J.C. J. Phys. C. 18:1985;3839.
9. Tok E.S., Neave J.H., Ashwin M.J., Joyce B.A., Jones T.S. J. Appl. Phys. 83(8):1998;4160.
10. Ziegler J.F., Manoyan J. Nucl. Instr. and Meth. B. 35:1988;215.