Pd/Si device characteristics on 100 MeV gold ions irradiation

Vacuum

Volumn 48, Issue 12, 1997, Pages 965-967

  Srivastava, P C ^a   Pandey, S P ^a   Avasthi, D K ^b   Asokan, K ^b  

^a BANARAS HINDU UNIVERSITY   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; GOLD; ION BOMBARDMENT; PALLADIUM COMPOUNDS; SEMICONDUCTING SILICON;

GOLD IONS IRRADIATION;

SEMICONDUCTOR DEVICES;

EID: 0031387693     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(97)00104-8     Document Type: Article

References (5)

1. Srivastava, P.C. and Singh, U.P., Bull. Mater. Sci., 1996, 19, 51.
2. Srivastava, P.C., Singh, U.P., Pandey, S.P. and Avasthi, D.K., Vacuum, 1996, 47(12), 1427.
3. Chavan, S.T., Bhave, P.S., Bhoraskar, V.N. and Kanjilal, D., J. Appl. Phys., 1995, 78, 2328.
4. Singh, U.P., Srivastava, P.C. and Chandra, S., Semicond. Sci. Technol., 1995, 10, 1368.
5. Tripathi, D., Srivastava, P.C. and Chandra, S., Solid State Electronics, 1992, 35, 1185.