Self annealing effect on neutron irradiated silicon detectors by hall effect analysis

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 2, 1996, Pages 1599-1604

  Biggeri, U ^a   Borchi, E ^a   Bruzzi, M ^a   Lazanu, S ^b   Li, Z ^c  

^a Dipartimento di Energetica   (Italy)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; HALL EFFECT; IRRADIATION; MATHEMATICAL MODELS; NEUTRONS; RADIATION DETECTORS;

DEEP ACCEPTOR LEVEL; HALL EFFECT MEASUREMENT; HIGH RESISTIVITY SILICON DETECTORS; SELF ANNEALING EFFECT;

SILICON SENSORS;

EID: 0030169125     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.507154     Document Type: Article

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