Monolithic InP HEMT/HBT integrated circuit technology by selective molecular beam epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 625-628

  Cowles, J ^a   Lai, R ^a   Tran, L ^a   Wang, H ^a   Chen, Y C ^a   Kobayashi, K ^a   Block, T ^a   Yen, H C ^a   Liu, P ^a   Oki, A ^a   Streit, D ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MILLIMETER WAVES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SUBSTRATES;

SELECTIVE SURFACE GROWTH;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 0030687289     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)